Terrestrial Neutron-Induced Soft Errors in Advanced Memory Devices (repost)
Terrestrial Neutron-Induced Soft Errors in Advanced Memory Devices by Takashi Nakamura, Eishi Yahagi, Hideaki Kameyama
English | 2008 | ISBN: 9812778810 | 368 pages | PDF | 14 MB
English | 2008 | ISBN: 9812778810 | 368 pages | PDF | 14 MB
Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices.
This book covers the relevant up-to-date topics in terrestrial neutron-induced soft errors, and aims to provide succinct knowledge on neutron-induced soft errors to the readers by presenting several valuable and unique features.